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FDD6680S
Power MOSFET, N Channel, 30 V, 55 A, 0.011 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD6680S
Order Code9845054
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id55A
Drain Source On State Resistance0.011ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max-
Power Dissipation60W
No. of Pins-
Operating Temperature Max-
Product Range-
Qualification-
MSL-
Alternatives for FDD6680S
1 Product Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
55A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
-
Power Dissipation
60W
Operating Temperature Max
-
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.011ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
-
No. of Pins
-
Product Range
-
MSL
-
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004