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FDC642P-F085P
Power MOSFET, P Channel, 20 V, 4 A, 0.0525 ohm, TSOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC642P-F085P
Order Code3616008
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4A
Drain Source On State Resistance0.0525ohm
Transistor Case StyleTSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.5V
Power Dissipation1.2W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
4A
Transistor Case Style
TSOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.2W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (15-Jan-2018)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.0525ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1