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FCPF165N65S3R0L.
Power MOSFET, N Channel, 650 V, 19 A, 0.14 ohm, TO-220FP, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFCPF165N65S3R0L.
Order Code2895664
Product RangeSUPERFET III
Technical Datasheet
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFCPF165N65S3R0L.
Order Code2895664
Product RangeSUPERFET III
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id19A
Drain Source On State Resistance0.14ohm
Transistor Case StyleTO-220FP
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation35W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeSUPERFET III
Qualification-
MSL-
SVHCLead (19-Jan-2021)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
19A
Transistor Case Style
TO-220FP
Rds(on) Test Voltage
10V
Power Dissipation
35W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (19-Jan-2021)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.14ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
SUPERFET III
MSL
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001
Product traceability