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FCP220N80
Power MOSFET, N Channel, 800 V, 23 A, 0.188 ohm, TO-220, Through Hole
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ManufacturerONSEMI
Manufacturer Part NoFCP220N80
Order Code3615912
Product RangeSuperFET II
Technical Datasheet
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFCP220N80
Order Code3615912
Product RangeSuperFET II
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id23A
Drain Source On State Resistance0.188ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation278W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeSuperFET II
Qualification-
SVHCNo SVHC (15-Jan-2018)
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Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
23A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
278W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
800V
Drain Source On State Resistance
0.188ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
SuperFET II
SVHC
No SVHC (15-Jan-2018)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1