Print Page
EFC3C001NUZTCG.
Dual MOSFET, N Channel
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoEFC3C001NUZTCG.
Order Code3616847
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel-
Transistor Case StyleWLCSP
No. of Pins4Pins
Power Dissipation N Channel1.6W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
4Pins
Power Dissipation P Channel
-
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Drain Source Voltage Vds N Channel
-
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
WLCSP
Power Dissipation N Channel
1.6W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1