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BUV26G
Bipolar (BJT) Single Transistor, NPN, 90 V, 20 A, 85 W, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoBUV26G
Order Code2317573
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max90V
Continuous Collector Current20A
Power Dissipation85W
Transistor Case StyleTO-220
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min-
Operating Temperature Max175°C
Product Range-
Qualification-
Product Overview
The BUV26G is a 90V Silicon NPN Bipolar Power Transistor designed for high speed applications. The transistor is ideal for switch-mode power supplies and high frequency converters as well as relay drivers.
- Collector-base voltage (Vcbo = 180V)
- Emitter-base voltage (Vcbo = 7V)
Applications
Power Management, Industrial
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
20A
Transistor Case Style
TO-220
No. of Pins
3Pins
DC Current Gain hFE Min
-
Product Range
-
Collector Emitter Voltage Max
90V
Power Dissipation
85W
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
175°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0022