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10+ | £0.590 |
100+ | £0.532 |
500+ | £0.425 |
1000+ | £0.356 |
5000+ | £0.325 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBDX33BG
Order Code9557725
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo80V
Power Dissipation Pd70W
DC Collector Current10A
RF Transistor CaseTO-220
No. of Pins3Pins
DC Current Gain hFE750hFE
Transistor MountingThrough Hole
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Product Overview
The BDX33BG is a 10A PNP bipolar power Darlington Transistor designed for general purpose and low speed switching applications.
- Complementary device
- Monolithic construction with built-in base emitter shunt resistors
- Low collector-emitter saturation voltage VCE(sat) = 2.5VDC maximum @ IC = 3A DC
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
NPN
Power Dissipation Pd
70W
RF Transistor Case
TO-220
DC Current Gain hFE
750hFE
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage V(br)ceo
80V
DC Collector Current
10A
No. of Pins
3Pins
Transistor Mounting
Through Hole
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
Alternatives for BDX33BG
2 Products Found
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002
Product traceability