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BD434S.
Bipolar (BJT) Single Transistor, PNP, 22 V, 4 A, 36 W, TO-126, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoBD434S.
Order Code3615300
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max22V
Continuous Collector Current4A
Power Dissipation36W
Transistor Case StyleTO-126
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency3MHz
DC Current Gain hFE Min40hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
4A
Transistor Case Style
TO-126
No. of Pins
3Pins
DC Current Gain hFE Min
40hFE
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Collector Emitter Voltage Max
22V
Power Dissipation
36W
Transistor Mounting
Through Hole
Transition Frequency
3MHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1