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BD138G
Bipolar (BJT) Single Transistor, PNP, 60 V, 1.5 A, 12.5 W, TO-225, Through Hole
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | £0.992 |
| 10+ | £0.695 |
| 100+ | £0.541 |
| 500+ | £0.424 |
| 1000+ | £0.356 |
| 5000+ | £0.321 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBD138G
Order Code2533319
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max60V
Continuous Collector Current1.5A
Power Dissipation12.5W
Transistor Case StyleTO-225
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min25hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
1.5A
Transistor Case Style
TO-225
No. of Pins
3Pins
DC Current Gain hFE Min
25hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
60V
Power Dissipation
12.5W
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for BD138G
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Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00068
Product traceability