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BD13716STU
Bipolar (BJT) Single Transistor, NPN, 60 V, 1.5 A, 12.5 W, TO-126, Through Hole
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No Longer Stocked
Product Information
ManufacturerONSEMI
Manufacturer Part NoBD13716STU
Order Code2453820
Transistor PolarityNPN
Collector Emitter Voltage Max60V
Continuous Collector Current1.5A
Power Dissipation12.5W
Transistor Case StyleTO-126
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min100hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for BD13716STU
1 Product Found
Product Overview
The BD13716STU is a NPN Epitaxial Silicon Transistor suitable for medium power linear and switching applications. The bipolar transistor complement to BD138 PNP transistor.
- -55 to 150°C Operating temperature range
Applications
Power Management, Industrial
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
1.5A
Transistor Case Style
TO-126
No. of Pins
3Pins
DC Current Gain hFE Min
100hFE
Product Range
-
Collector Emitter Voltage Max
60V
Power Dissipation
12.5W
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000761