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Product Information
ManufacturerONSEMI
Manufacturer Part NoBC847BPDW1T1G
Order Code1653701
Technical Datasheet
Transistor PolarityNPN, PNP
Collector Emitter Voltage Max45V
Transition Frequency100MHz
Power Dissipation380mW
Continuous Collector Current100mA
Transistor Case StyleSOT-363
No. of Pins3Pins
DC Current Gain hFE Min200hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (23-Jan-2024)
Product Overview
The BC847BPDW1T1G is a NPN-PNP dual General Purpose Transistor designed for general purpose amplifier applications. It is housed in a surface-mount package for low power applications.
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
NPN, PNP
Transition Frequency
100MHz
Continuous Collector Current
100mA
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
45V
Power Dissipation
380mW
Transistor Case Style
SOT-363
DC Current Gain hFE Min
200hFE
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (2)
Alternatives for BC847BPDW1T1G
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.09
Product traceability