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BC558BTA.
Bipolar (BJT) Single Transistor, PNP, 30 V, 100 mA, 500 mW, TO-92, Through Hole
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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoBC558BTA.
Order Code2453806
Transistor PolarityPNP
Collector Emitter Voltage Max30V
Continuous Collector Current100mA
Power Dissipation500mW
Transistor Case StyleTO-92
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency150MHz
DC Current Gain hFE Min200hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The BC558BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications.
- Complement to BC548
Applications
Power Management, Industrial
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
100mA
Transistor Case Style
TO-92
No. of Pins
3Pins
DC Current Gain hFE Min
200hFE
Product Range
-
Collector Emitter Voltage Max
30V
Power Dissipation
500mW
Transistor Mounting
Through Hole
Transition Frequency
150MHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000907
Product traceability