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3LN01C-TB-H.
Power MOSFET, N Channel, 30 V, 150 mA, 2.9 ohm, SOT-23, Surface Mount
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Product Information
ManufacturerONSEMI
Manufacturer Part No3LN01C-TB-H.
Order Code2630394RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id150mA
Drain Source On State Resistance2.9ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4V
Gate Source Threshold Voltage Max-
Power Dissipation250mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
150mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4V
Power Dissipation
250mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
2.9ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
-
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00033
Product traceability