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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part No2N5886G
Order Code9556087
Product Range2NXXXX
Technical Datasheet
Collector Emitter Voltage Max80V
Continuous Collector Current25A
Power Dissipation200W
No. of Pins2Pins
Transition Frequency4MHz
DC Current Gain hFE Min4hFE
Operating Temperature Max200°C
Product Range2NXXXX
Product Overview
The 2N5886G is a 25A NPN high-power complementary Silicon Transistor designed for general-purpose power amplifier and switching applications.
- Low collector-emitter saturation voltage (1VDC maximum VCE(sat) @ 15A DC IC)
- Low leakage current (1mA DC maximum ICEX @ rated voltage)
- Excellent DC current gain (20 minimum hFE @ 10A DC IC)
Applications
Industrial, Power Management
Technical Specifications
Collector Emitter Voltage Max
80V
Power Dissipation
200W
Transition Frequency
4MHz
Operating Temperature Max
200°C
Continuous Collector Current
25A
No. of Pins
2Pins
DC Current Gain hFE Min
4hFE
Product Range
2NXXXX
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:India
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:India
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.012021
Product traceability