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BUJ302A
Bipolar (BJT) Single Transistor, NPN, 1.05 kV, 4 A, 80 W, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoBUJ302A
Order Code1972410
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max1.05kV
Continuous Collector Current4A
Power Dissipation80W
Transistor Case StyleTO-220
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min66hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2018)
Product Overview
The BUJ302A is a high voltage, high speed planar-passivated NPN Power Transistor features fast switching, high voltage capability and low thermal resistance.
- 2A Base current
- 24V Emitter-base voltage
Applications
Lighting, Power Management, Motor Drive & Control
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
4A
Transistor Case Style
TO-220
No. of Pins
3Pins
DC Current Gain hFE Min
66hFE
Product Range
-
SVHC
No SVHC (27-Jun-2018)
Collector Emitter Voltage Max
1.05kV
Power Dissipation
80W
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00499