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Product Information
ManufacturerNXP
Manufacturer Part NoBFT46,215
Order Code1081306
Technical Datasheet
Gate Source Breakdown Voltage Max-
Zero Gate Voltage Drain Current Idss Min200µA
Zero Gate Voltage Drain Current Max1.5mA
Gate Source Cutoff Voltage Max-2V
Transistor Case StyleSOT-23
Transistor TypeJFET
Operating Temperature Max150°C
Channel TypeN Channel
No. of Pins3 Pin
Transistor MountingSurface Mount
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Dec-2015)
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Product Overview
The BFT46 is a N-channel JFET encapsulated in a micro-miniature plastic envelope. This symmetrical silicon epitaxial planar transistor is intended for low level general purpose amplifiers in thick and thin-film circuits.
Applications
Industrial, Power Management
Technical Specifications
Gate Source Breakdown Voltage Max
-
Zero Gate Voltage Drain Current Max
1.5mA
Transistor Case Style
SOT-23
Operating Temperature Max
150°C
No. of Pins
3 Pin
Product Range
-
MSL
-
Zero Gate Voltage Drain Current Idss Min
200µA
Gate Source Cutoff Voltage Max
-2V
Transistor Type
JFET
Channel Type
N Channel
Transistor Mounting
Surface Mount
Qualification
-
SVHC
No SVHC (17-Dec-2015)
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Netherlands
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Netherlands
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000033
Product traceability