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Product Information
ManufacturerNXP
Manufacturer Part NoBFG425W,115
Order Code1758047
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max4.5V
Transition Frequency25GHz
Power Dissipation135mW
Continuous Collector Current25mA
Transistor Case StyleSOT-343R
No. of Pins3Pins
DC Current Gain hFE Min80hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The BFG425W,115 is a NPN double polysilicon Wideband Transistor with buried layer for low voltage applications in a plastic, dual-emitter package. It is designed for use with RF front end, analogue and digital cellular telephones, cordless telephones (PHS, DECT), radar detectors, pagers, SATV tuners and high frequency oscillator applications.
- Very high power gain
- Low noise figure
- High transition frequency
- Emitter is thermal lead
- Low feedback capacitance
Applications
Industrial, RF Communications, Communications & Networking, Power Management
Technical Specifications
Transistor Polarity
NPN
Transition Frequency
25GHz
Continuous Collector Current
25mA
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Product Range
-
Collector Emitter Voltage Max
4.5V
Power Dissipation
135mW
Transistor Case Style
SOT-343R
DC Current Gain hFE Min
80hFE
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006