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BFG21W,115
Bipolar - RF Transistor, NPN, 4.5 V, 18 GHz, 600 mW, 500 mA, SOT-343R
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Product Information
ManufacturerNXP
Manufacturer Part NoBFG21W,115
Order Code1758043
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max4.5V
Transition Frequency18GHz
Power Dissipation600mW
Continuous Collector Current500mA
Transistor Case StyleSOT-343R
No. of Pins3Pins
DC Current Gain hFE Min40hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The BFG21W,115 is an NPN Double Polysilicon Bipolar Power Transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package. This UHF power transistor is suitable for linear and non-linear operations.
- High power gain
- High efficiency
Applications
RF Communications
Technical Specifications
Transistor Polarity
NPN
Transition Frequency
18GHz
Continuous Collector Current
500mA
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Product Range
-
Collector Emitter Voltage Max
4.5V
Power Dissipation
600mW
Transistor Case Style
SOT-343R
DC Current Gain hFE Min
40hFE
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006