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BFG135
Bipolar - RF Transistor, NPN, 15 V, 7 GHz, 1 W, 150 mA, SOT-223
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Product Information
ManufacturerNXP
Manufacturer Part NoBFG135
Order Code1081288RL
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max15V
Transition Frequency7GHz
Power Dissipation1W
Continuous Collector Current150mA
Transistor Case StyleSOT-223
No. of Pins3Pins
DC Current Gain hFE Min130hFE
Transistor MountingSurface Mount
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Dec-2015)
Product Overview
The BFG135 is a 7GHz NPN Silicon Planar Epitaxial Transistor intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level. The distribution of the active areas across the surface of the device gives an excellent temperature profile.
- 175°C Junction temperature
Applications
RF Communications, Audio
Technical Specifications
Transistor Polarity
NPN
Transition Frequency
7GHz
Continuous Collector Current
150mA
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Product Range
-
MSL
-
Collector Emitter Voltage Max
15V
Power Dissipation
1W
Transistor Case Style
SOT-223
DC Current Gain hFE Min
130hFE
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (17-Dec-2015)
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Netherlands
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Netherlands
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001216
Product traceability