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BF512,215
RF FET Transistor, 20 V, 30 mA, 250 mW, TO-236AB
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Product Information
ManufacturerNXP
Manufacturer Part NoBF512,215
Order Code2985161RL
Technical Datasheet
Drain Source Voltage Vds20V
Continuous Drain Current Id30mA
Power Dissipation250mW
Power Dissipation Pd250mW
Operating Frequency Min-
Operating Frequency Max-
Transistor Case StyleTO-236AB
No. of Pins3Pins
RF Transistor CaseTO-236AB
Operating Temperature Max150°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
Technical Specifications
Drain Source Voltage Vds
20V
Power Dissipation
250mW
Operating Frequency Min
-
Transistor Case Style
TO-236AB
RF Transistor Case
TO-236AB
Channel Type
N Channel
Product Range
-
Continuous Drain Current Id
30mA
Power Dissipation Pd
250mW
Operating Frequency Max
-
No. of Pins
3Pins
Operating Temperature Max
150°C
Transistor Mounting
Surface Mount
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0003
Product traceability