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PSMN7R5-30YLD
Power MOSFET, N Channel, 30 V, 51 A, 0.0061 ohm, PowerSO, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPSMN7R5-30YLD
Order Code2400980
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id51A
Drain Source On State Resistance0.0061ohm
Transistor Case StylePowerSO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation34W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Product Overview
The PSMN7R5-30YLD is a N-channel enhancement-mode logic level gate drive MOSFET optimised for 4.5V gate drive. NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
- Ultra-low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
- Superfast switching with soft-recovery (s-factor<gt/>1)
- Low spiking and ringing for low EMI designs
- Unique SchottkyPlus technology
- Schottky-like performance with <lt/>1µA leakage at 25°C
- Low parasitic inductance and resistance
- High reliability clip bonded and solder die attach power SO8 package
- No glue, no wire bonds, qualified to 175°C
- Wave solderable, exposed leads for optimal visual solder inspection
- -55 to 175°C Junction temperature range
Applications
Power Management, Communications & Networking, Computers & Computer Peripherals, Motor Drive & Control, Multimedia, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
51A
Transistor Case Style
PowerSO
Rds(on) Test Voltage
10V
Power Dissipation
34W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0061ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
8Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00003