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No Longer Manufactured
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPSMN2R7-30PL,127
Order Code1845665
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id100A
Drain Source On State Resistance0.0023ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation170W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
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Product Overview
The PSMN2R7-30PL is a N-channel MOSFET suitable for logic level gate drive sources. It is designed and qualified for use in a wide range of DC-to-DC converters, load switching, server power supplies and domestic equipment applications.
- High efficiency due to low switching and conduction losses
- -55 to 175°C Junction temperature range
Applications
Power Management, Communications & Networking, Consumer Electronics, Motor Drive & Control, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
170W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0023ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
1.7V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00008
Product traceability