PSMN0R9-30YLDX
Power MOSFET, N Channel, 30 V, 100 A, 650 µohm, SOT-1023, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | £1.620 |
| 10+ | £1.120 |
| 100+ | £0.877 |
| 500+ | £0.861 |
| 1000+ | £0.823 |
| 5000+ | £0.785 |
Product Information
Product Overview
The PSMN0R9-30YLD is a 30V logic level N-channel Enhancement Mode MOSFET using NextPowerS3 technology. NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. It is particularly suited to high efficiency applications at high switching frequencies. Suitable for on-board DC-to-DC solutions for server and telecommunications and secondary-side synchronous rectification in telecommunication applications.
- Avalanche rated, 100% tested at I (as) = 190A
- Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
- Superfast switching with soft-recovery, s-factor <gt/>1
- Low spiking and ringing for low EMI designs
- Optimised for 4.5V gate drive
- Low parasitic inductance and resistance
- High reliability clip bonded and solder die attach power SO8 package
- Wave solderable exposed leads for optimal visual solder inspection
Applications
Power Management, Industrial, Communications & Networking, Medical
Technical Specifications
N Channel
100A
SOT-1023
10V
349W
175°C
-
Lead (21-Jan-2025)
30V
650µohm
Surface Mount
1.5V
4Pins
-
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate