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PMWD16UN
Dual MOSFET, N Channel, 20 V, 9.9 A, 0.019 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoPMWD16UN
Order Code1097306
Product RangeµTrenchMOS Series
Technical Datasheet
No Longer Manufactured
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMWD16UN
Order Code1097306
Product RangeµTrenchMOS Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel9.9A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.019ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleTSSOP
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product RangeµTrenchMOS Series
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
µTrenchMOS Series
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
9.9A
Drain Source On State Resistance N Channel
0.019ohm
Transistor Case Style
TSSOP
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000034