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PMV75UP
Power MOSFET, P Channel, 20 V, 3.2 A, 0.077 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMV75UP
Order Code2469658
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id3.2A
Drain Source On State Resistance0.077ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max680mV
Power Dissipation490mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The PMV75UP is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in LED driver, high-side load-switch and switching circuit applications.
- Low threshold voltage
- Very fast switching
- 1000mW Enhanced power dissipation capability Ptot
- -55 to 150°C Junction temperature range
Applications
Power Management, LED Lighting, Industrial
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
3.2A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
490mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.077ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
680mV
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006