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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMV65XP,215
Order Code1758119RL
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.3A
Drain Source On State Resistance0.058ohm
Transistor Case StyleTO-236AB
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max750mV
Power Dissipation833mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The PMV65XP,215 is a P-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology.
- Low Threshold Voltage
- Low On-state Resistance
Applications
Audio, Power Management, Signal Processing
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
4.3A
Transistor Case Style
TO-236AB
Rds(on) Test Voltage
4.5V
Power Dissipation
833mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.058ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
750mV
No. of Pins
3Pins
Product Range
-
MSL
-
Alternatives for PMV65XP,215
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000127
Product traceability