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PMV50ENEAR
Power MOSFET, N Channel, 30 V, 3.9 A, 0.03 ohm, TO-236AB, Surface Mount
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMV50ENEAR
Order Code2628093RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id3.9A
Drain Source On State Resistance0.03ohm
Transistor Case StyleTO-236AB
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation510mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3.9A
Transistor Case Style
TO-236AB
Rds(on) Test Voltage
10V
Power Dissipation
510mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.03ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000009