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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMV37ENEAR
Order Code3212678
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id3.5A
Drain Source On State Resistance0.037ohm
Transistor Case StyleTO-236AB
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation710mW
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The PMV37ENEAR from NEXPERIA is a N Channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device plastic package using Trench MOSFET technology.
- Suitable for relay driver, high speed line driver, low-side load switch and switching circuits
- Logic-level compatible
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection <gt/>2 kV HBM (class H2)
- AEC-Q101 qualified
Applications
Medical
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3.5A
Transistor Case Style
TO-236AB
Rds(on) Test Voltage
10V
Power Dissipation
710mW
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.037ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006
Product traceability