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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMV37EN2
Order Code2469653RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id5.6A
Drain Source On State Resistance0.031ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation510mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jan-2018)
Product Overview
The PMV37EN2 is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
- Logic-level compatible
- Very fast switching
- Enhanced power dissipation capability of 1115mW
- -55 to 150°C Junction temperature range
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5.6A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
510mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.031ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006