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No Longer Manufactured
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMV30UN,215
Order Code1758116RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2A
Drain Source On State Resistance0.03ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max700mV
Power Dissipation1.9W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jan-2018)
Alternatives for PMV30UN,215
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Product Overview
The PMV30UN,215 is a N-channel enhancement-mode ultra-low level FET in a plastic package using TrenchMOS® technology. It is suitable for use in battery management and high-speed switching applications.
- Suitable for high frequency applications due to fast switching characteristics
- Surface-mount package
- -55 to 150°C Junction temperature range
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.9W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.03ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
700mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006