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PMR280UN,115
Power MOSFET, N Channel, 20 V, 200 mA, 0.28 ohm, SOT-416, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMR280UN,115
Order Code1758110RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id200mA
Drain Source On State Resistance0.28ohm
Transistor Case StyleSOT-416
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max700mV
Power Dissipation530mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The PMR280UN,115 is a N-channel enhancement-mode FET in ultra-small surface-mount plastic package using TrenchMOS® technology. It is suitable for use in driver circuits and switching in portable appliances.
- Footprint 63% smaller than SOT23
- Low ON-state resistance
- Low threshold voltage
- -55 to 150°C Junction temperature range
Applications
Power Management, Portable Devices, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
200mA
Transistor Case Style
SOT-416
Rds(on) Test Voltage
4.5V
Power Dissipation
530mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.28ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
700mV
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006