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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMGD370XN
Order Code1894746RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel740mA
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.37ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel410mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The PMGD370XN is a dual N-channel enhancement-mode FET in a surface-mount plastic package using TrenchMOS™ technology. It is suitable for driver circuits and switching in portable appliances applications. The device offers 40% smaller footprint.
- Fast switching speed
- Low ON-state resistance
- Low threshold voltage
Applications
Industrial, Portable Devices, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
740mA
Drain Source On State Resistance N Channel
0.37ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
410mW
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000005