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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMCM6501UNEZ
Order Code2843479
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id8.7A
Drain Source On State Resistance0.017ohm
Transistor Case StyleWLCSP
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max600mV
Power Dissipation556mW
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jan-2018)
Product Overview
Nexperia have designed their smallest solution Field-Effect Transistor (FET) in a 4 and 6 bump Wafer Level Chip-Size packages (WLCSP) using trench MOSFET technology, offering N-Channel & P-channel MOSFETS with 4 or 6 pin configurations. These MOSFETs feature a very low On Resistance per mm² while maintaining greater than 2 kV of ESD protection.
Applications
Portable Devices, Medical
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
8.7A
Transistor Case Style
WLCSP
Rds(on) Test Voltage
4.5V
Power Dissipation
556mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.017ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
600mV
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000036
Product traceability