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PHT6N06T
Power MOSFET, N Channel, 55 V, 2.5 A, 0.15 ohm, SOT-223, Surface Mount
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPHT6N06T
Order Code1081456
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id2.5A
Drain Source On State Resistance0.15ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation8.3W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for PHT6N06T
2 Products Found
Product Overview
The PHT6N06T is a N-channel enhancement-mode FET in a plastic package using TrenchMOS™ technology. It is suitable for use in DC to DC converters and general purpose switch applications.
- Low ON-state resistance
- Low QGD
- Fast switching
- Surface-mount package
- -55 to 150°C Junction temperature range
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2.5A
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
8.3W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.15ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Great Britain
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Great Britain
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00012