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PHKD6N02LT
Power MOSFET, N Channel, 20 V, 10.9 A, 0.02 ohm, SOIC, Surface Mount
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No Longer Manufactured
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPHKD6N02LT
Order Code1097170
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id10.9A
Drain Source On State Resistance0.02ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage2.5V
Gate Source Threshold Voltage Max1.5V
Power Dissipation4.17W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
10.9A
Transistor Case Style
SOIC
Rds(on) Test Voltage
2.5V
Power Dissipation
4.17W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.02ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
8Pins
Product Range
-
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005