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PHKD3NQ10T,518
Dual MOSFET, N Channel, 100 V, 100 V, 3 A, 3 A, 0.07 ohm
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPHKD3NQ10T,518
Order Code2777608
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel100V
Drain Source Voltage Vds P Channel100V
Continuous Drain Current Id N Channel3A
Continuous Drain Current Id P Channel3A
Drain Source On State Resistance N Channel0.07ohm
Drain Source On State Resistance P Channel0.07ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
100V
Continuous Drain Current Id P Channel
3A
Drain Source On State Resistance P Channel
0.07ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
Drain Source Voltage Vds N Channel
100V
Continuous Drain Current Id N Channel
3A
Drain Source On State Resistance N Channel
0.07ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001
Product traceability