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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPHC2300,118
Order Code1758128
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel300V
Drain Source Voltage Vds P Channel300V
Continuous Drain Current Id N Channel170mA
Continuous Drain Current Id P Channel170mA
Drain Source On State Resistance N Channel6ohm
Drain Source On State Resistance P Channel6ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel1.6W
Power Dissipation P Channel1.8W
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The PHC2300,118 is a 300V Complementary Enhancement Mode MOS Transistor, one N-channel and one P-channel FET designed for computing and high frequency applications due to fast switching characteristics.
- 150°C Junction temperature
Applications
Power Management, Consumer Electronics, Industrial, Computers & Computer Peripherals
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
300V
Continuous Drain Current Id P Channel
170mA
Drain Source On State Resistance P Channel
6ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.8W
Product Range
-
Drain Source Voltage Vds N Channel
300V
Continuous Drain Current Id N Channel
170mA
Drain Source On State Resistance N Channel
6ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
1.6W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000232