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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPBSS5220T,215
Order Code8736456RL
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max20V
Continuous Collector Current2A
Power Dissipation300mW
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min225hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The PBSS5220T is a 2A PNP breakthrough-in small signal (BISS) Transistor in a plastic package offering ultra-low VCEsat and RCEsat parameters.
- Low collector-emitter saturation voltage VCEsat
- High collector current capabilities of IC and ICM
- Higher efficiency leading to less heat generation
- Reduced printed-circuit board requirements
- 3F Marking code
Applications
Industrial, Power Management, Signal Processing, Consumer Electronics, Lighting, Motor Drive & Control
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
2A
Transistor Case Style
SOT-23
No. of Pins
3Pins
DC Current Gain hFE Min
225hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
20V
Power Dissipation
300mW
Transistor Mounting
Surface Mount
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000008
Product traceability