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PBHV9560Z
Bipolar (BJT) Single Transistor, PNP, 600 V, 500 mA, 650 mW, SOT-223, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPBHV9560Z
Order Code2469669RL
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max600V
Continuous Collector Current500mA
Power Dissipation650mW
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency38MHz
DC Current Gain hFE Min50hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The PBHV9560Z is a 0.5A PNP breakthrough-in small signal (BISS) Transistor in a medium power surface-mount plastic package with increased heat-sink.
- High voltage
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC
- High collector current gain (hFE) at high IC
- AEC-Q101 qualified
- NPN complement is PBHV8560Z
- HV956Z Marking code
Applications
Industrial, Lighting, Automotive, Motor Drive & Control, Power Management, Communications & Networking
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
500mA
Transistor Case Style
SOT-223
No. of Pins
3Pins
DC Current Gain hFE Min
50hFE
Product Range
-
Collector Emitter Voltage Max
600V
Power Dissipation
650mW
Transistor Mounting
Surface Mount
Transition Frequency
38MHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00003