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GAN039-650NTBZ
Gallium Nitride (GaN) Transistor, 650 V, 58.5 A, 0.039 ohm, 26 nC, SOT-8005, Surface Mount
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoGAN039-650NTBZ
Order Code4313176RL
Technical Datasheet
Drain Source Voltage Vds650V
Continuous Drain Current Id58.5A
Drain Source On State Resistance0.039ohm
Typical Gate Charge26nC
Transistor Case StyleSOT-8005
Transistor MountingSurface Mount
No. of Pins12Pins
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.039ohm
Transistor Case Style
SOT-8005
No. of Pins
12Pins
Qualification
-
Continuous Drain Current Id
58.5A
Typical Gate Charge
26nC
Transistor Mounting
Surface Mount
Product Range
-
SVHC
Lead (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1