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BUK7214-75B,118
Power MOSFET, N Channel, 75 V, 69 A, 0.0126 ohm, TO-252 (DPAK), Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 500+ | £0.716 |
| 1000+ | £0.583 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
£361.50 (ex VAT)
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBUK7214-75B,118
Order Code2777579RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id69A
Drain Source On State Resistance0.0126ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation158W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jan-2018)
Product Overview
BUK7214-75B,118 is a N-channel TrenchMOS standard level FET. It is a standard-level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. Applications include 12V, 24V and 42V loads, automotive systems, general purpose power switching, motors, lamps and solenoids.
- AEC Q101 compliant
- Low conduction losses due to low on-state resistance
- Suitable for standard level gate drive sources
- Suitable for thermally demanding environments due to 185°C rating
- 3 leads plastic single-ended surface-mounted package (DPAK)
- Junction temperature range from -55 to 185°C
- Drain-source breakdown voltage is 75V at ID = 0.25mA; VGS = 0V; Tj = 25°C
- Drain-source on-state resistance is 33mohm at VGS = 10V; ID = 25A; Tj = 185°C
- Source-drain voltage is 1.2V at IS = 25A; VGS = 0V; Tj = 25°C
- Rise time is 114ns
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
69A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
158W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (15-Jan-2018)
Drain Source Voltage Vds
75V
Drain Source On State Resistance
0.0126ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000426
Product traceability