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No Longer Manufactured
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBUK6207-55C,118
Order Code1863263
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id90A
Drain Source On State Resistance0.0066ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.3V
Power Dissipation158W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Product Overview
The BUK6207-55C is a N-channel enhancement-mode intermediate level gate drive FET in a plastic package using advanced TrenchMOS® technology. The device has been designed and qualified to the appropriate AEC-Q101 standard for use in high performance automotive applications.
- Compatible with logic and standard level gate drives
- Suitable for thermally demanding environments due to 175°C rating
Applications
Automotive, Power Management, Motor Drive & Control, Lighting, Automation & Process Control, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
90A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
158W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.0066ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.3V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000562