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BSP130,115
Power MOSFET, N Channel, 300 V, 250 mA, 6 ohm, SOT-223, Surface Mount
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSP130,115
Order Code1758082RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds300V
Continuous Drain Current Id250mA
Drain Source On State Resistance6ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation1.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The BSP130,115 is a N-channel enhancement-mode vertical D-MOS Transistor in a miniature package. It is suitable for use in line current interrupter in telephone sets, relay, high-speed and line transformer driver applications.
- Direct interface to C-MOS, TTL
- High-speed switching
- No secondary breakdown
Applications
Power Management, Communications & Networking, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
250mA
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
1.5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
300V
Drain Source On State Resistance
6ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006
Product traceability