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BSP110,115
Power MOSFET, N Channel, 100 V, 150 mA, 10 ohm, SOT-223, Surface Mount
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSP110,115
Order Code1758078
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id150mA
Drain Source On State Resistance10ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max2V
Power Dissipation6.25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The BSP110,115 is a N-channel enhancement-mode FET in a plastic package using TrenchMOS™1 technology. It is suitable for relay driver, high speed line driver and logic level translator applications.
- Very fast switching
- Logic level compatible
- Surface-mount package
- -65 to 150°C Operating junction temperature range
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
150mA
Transistor Case Style
SOT-223
Rds(on) Test Voltage
5V
Power Dissipation
6.25W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
10ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00023