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BSP030,115
Power MOSFET, N Channel, 30 V, 5 A, 0.02 ohm, SOT-223, Surface Mount
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSP030,115
Order Code1758077RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id5A
Drain Source On State Resistance0.02ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation8.3W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Product Overview
The BSP030,115 is a 30V N-channel Enhancement Mode Field Effect Transistor uses TrenchMOS™1 technology. Low on resistance and fast switching performance makes this device suitable for motor, actuator and battery management applications.
- 150°C Junction temperature
- Logic level gate drive
- Low conduction losses
Applications
Power Management, Industrial, Motor Drive & Control
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5A
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
8.3W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.02ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
4Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000228