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No Longer Manufactured
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSH111,215
Order Code2336817
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id335mA
Drain Source On State Resistance2.3ohm
Transistor Case StyleTO-236AB
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation830mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for BSH111,215
2 Products Found
Product Overview
The BSH111,215 is a N-channel enhancement-mode FET in a plastic package using TrenchMOS™1 technology. It is suitable for use in battery management, high speed switch and logic level translator applications.
- Very fast switching
- Logic level compatible
- Subminiature surface-mount package
- -65 to 150°C Junction temperature range
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
335mA
Transistor Case Style
TO-236AB
Rds(on) Test Voltage
4.5V
Power Dissipation
830mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
55V
Drain Source On State Resistance
2.3ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001