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500+ | £0.0997 |
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSH105,215
Order Code1758066RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1.05A
Drain Source On State Resistance0.2ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max570mV
Power Dissipation417mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BSH105,215 is a N-channel enhancement mode Field-Effect Transistor in a plastic package using vertical D-MOS technology. Suitable for high frequency applications due to fast switching characteristics.
- Logic-level compatible
- Very fast switching
- Low threshold voltage
Applications
Industrial, Computers & Computer Peripherals, Communications & Networking, Consumer Electronics
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.05A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
417mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.2ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
570mV
No. of Pins
3Pins
Product Range
-
MSL
-
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006