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No Longer Manufactured
Product Information
ManufacturerNEXPERIA
Manufacturer Part No2N7002K,215
Order Code1758065
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id340mA
Drain Source On State Resistance2.8ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation830mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Product Overview
The 2N7002K,215 is a N-channel enhancement mode logic level field-effect transistor (FET) in a plastic package using TrenchMOS™ technology. Logic level compatible, very fast switching, gate-source ESD protection diodes.
- Gate-source ESD protection diodes
Applications
Industrial
Warnings
ESD sensitive device, take proper precaution while handling the device.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
340mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
830mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
2.8ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85423990
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00006