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2N7002BK,215
Power MOSFET, N Channel, 60 V, 350 mA, 1 ohm, SOT-23, Surface Mount
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Product Information
ManufacturerNEXPERIA
Manufacturer Part No2N7002BK,215
Order Code1859847
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id350mA
Drain Source On State Resistance1ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Power Dissipation440mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The 2N7002BK is a N-channel enhancement mode Field-Effect Transistor (FET) in surface-mounted plastic package using Trench MOSFET technology. Suitable for high-speed line driver, low-side loadswitch and switching circuits.
- Logic-level compatible
- Very fast switching
- AEC-Q101 Qualified
- Up to 1kV ESD protection
Applications
Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
350mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
440mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
1ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.6V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000007