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IXYH50N65C3D1
IGBT, 50 A, 2.1 V, 600 W, 650 V, TO-247, 3 Pins
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No Longer Manufactured
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXYH50N65C3D1
Order Code2470020
Technical Datasheet
Continuous Collector Current50A
Collector Emitter Saturation Voltage2.1V
Power Dissipation600W
Collector Emitter Voltage Max650V
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
Technical Specifications
Continuous Collector Current
50A
Power Dissipation
600W
Transistor Case Style
TO-247
Operating Temperature Max
175°C
Product Range
-
Collector Emitter Saturation Voltage
2.1V
Collector Emitter Voltage Max
650V
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.006